Theoretical study on the perpendicular anisotropic magnetoresistance using Rashba-type ferromagnetic model
Theoretical study on the perpendicular anisotropic magnetoresistance using Rashba-type ferromagnetic model
复制标题
DOI：
10.1063/1.5007179
复制
发表时间：
2018-01
期刊：
影响因子：
1.6
通讯作者：
Y. Yahagi;D. Miura;A. Sakuma
中科院分区：
文献类型：
--
作者：
Y. Yahagi;D. Miura;A. Sakuma
用微观理论研究了非磁性绝缘体上铁磁-金属多层膜的各向异性磁阻效应。我们用包括交换场和拉什巴场的紧束缚模型来表示这种情况，其中拉什巴场被认为起源于自旋-轨道相互作用，即与绝缘体的结效应。为了描述AMR比，根据久保公式计算了直流电导率。结果表明，Rashba场同时产生了垂直AMR效应和面内AMR效应，垂直AMR效应随着薄膜厚度的增加而迅速衰减。
We investigated the anisotropic magnetoresistance (AMR) effects in ferromagnetic-metal multi-layers stacked on non-magnetic insulators in the context of microscopic theory. We represented this situation with tight-binding models that included the exchange and Rashba fields, where the Rashba field was assumed to originate from spin–orbit interactions as junction effects with the insulator. To describe the AMR ratios, the DC conductivity was calculated based on the Kubo formula. As a result, we showed that the Rashba field induced both perpendicular and in-plane AMR effects and that the perpendicular AMR effect rapidly decayed with increasing film thickness.