Structural, compositional and optical properties of PECVD silicon nitride layers
Structural, compositional and optical properties of PECVD silicon nitride layers
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DOI：
10.1088/0022-3727/45/44/445301
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发表时间：
2012-11-07
影响因子：
3.4
通讯作者：
Jagadish, Chennupati
中科院分区：
文献类型：
--
作者：
Karouta, Fouad;Vora, Kaushal;Jagadish, Chennupati
我们已经调查了各种等离子体增强化学气相沉积（PECVD）工艺参数的氮化硅层的结构，成分和光学性能之间的相关性。研究的工艺参数是气体成分，射频功率及其频率和沉积温度。我们还研究了锡永和无氨SiNx层。折射率，厚度，残余应力，结构和组成的电介质层，使用干涉测量，晶片弯曲，扫描电子显微镜，傅立叶变换红外和二次离子质谱测量。SiNx膜可以沉积为几乎无应力，具有相对低的氢浓度（原子H的10至19%）。SiNx层具有覆盖宽范围的折射率（1.8-2.1）的潜力，通过各种锡永层可能延伸到1.40。
We have investigated the correlation between the various plasma-enhanced chemical vapour deposition (PECVD) process parameters on the structural, compositional and optical properties of SiNx layers. The investigated process parameters are gas composition, radio frequency power and its frequency and deposition temperature. We also investigated SiON and ammonia-free SiNx layers. Refractive index, thickness, residual stress, structure and composition of the dielectric layers were determined using interferometry, wafer bowing, scanning electron microscopy, Fourier transform infra-red and secondary ion mass spectrometry measurements. SiNx films can be deposited to be almost stress-free with relatively low concentration of hydrogen (10 to 19% of atomic H). SiNx layers have the potential to cover a wide range of refractive indices (1.8-2.1) with possible extension down to 1.40 through various SiON layers.