Sr9R2-xEuxW4O24 (R = Gd and Y) red phosphor for near-UV and blue InGaN-based white LEDs
Sr9R2-xEuxW4O24 (R = Gd and Y) red phosphor for near-UV and blue InGaN-based white LEDs
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DOI：
10.1016/j.ssc.2009.02.056
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发表时间：
2009-06-01
影响因子：
2.1
通讯作者：
Su, Qiang
中科院分区：
文献类型：
--
作者：
Zeng, Qihua;He, Pei;Su, Qiang
采用传统的固相反应法制备了Eu 3+激活的Sr9 R2-xEuxW 4 O24（R = Gd和Y）荧光粉，并对其光致发光性能进行了研究。荧光粉在395和465 nm光激发下显示出强烈的红色发射，这分别与近紫外发射和蓝光发射InGaN芯片的发光波长相匹配。通过将Sr9Y0.4Eu1.6W4O24磷光体分别涂覆到类似于395 nm发射的InGaN芯片和类似于460 nm发射蓝光的InGaN芯片上，制备了明亮的红光发射二极管（LED）和白光发射二极管（WLED）。LED的良好性能表明，钨酸盐适合于近紫外和蓝色InGaN基WLED的应用。(C)2009爱思唯尔有限公司保留所有权利。
Eu3+-activated phosphors, Sr9R2-xEuxW4O24 (R = Gd and Y), were prepared by the conventional solid-state reaction method and their photoluminescent properties were studied. The phosphors show intense red emission under 395 and 465 nm light excitation, which is matched with the light-emitting wavelength of a near-UV-emitting and a blue-emitting InGaN chips, respectively. Bright red-light-emitting diodes (LEDs) and white-light-emitting diodes (WLEDs) were fabricated by coating Sr9Y0.4Eu1.6W4O24 phosphor onto similar to 395 nm-emitting InGaN chips and similar to 460 nm blue-emitting InGaN chips, respectively. The good performances of the LEDs demonstrate that the tungstates are suitable for application of near-UV and blue InGaN-based WLEDs. (C) 2009 Elsevier Ltd. All rights reserved.