Power semiconductor devices for variable-frequency drives
Power semiconductor devices for variable-frequency drives
复制标题
用于变频驱动器的功率半导体器件
DOI：
10.1109/5.301680
复制
发表时间：
1994
影响因子：
20.6
通讯作者：
B. Baliga
中科院分区：
文献类型：
--
作者：
B. Baliga
功率半导体技术的进步是提高变频电机驱动性能的主要动力。具有mos栅极结构的功率半导体器件的发展使得以很少的输入功率控制大量的能量成为可能。一个同样重要的进步发生在改进的整流器的发展与减少损耗的高频操作。此外，mos门控电源开关的出现导致了智能电源技术的创造，使具有内置诊断和保护功能的紧凑型系统在商业上可行。虽然今天的功率半导体芯片都是由硅制成的，但最近的分析表明，从长远来看，由碳化硅制成的器件有可能完全取代硅器件。>
Advances in power semiconductor technology are the driving force for enhancement of the performance of variable-frequency motor drives. The development of power semiconductor devices with MOS-gate structures has enabled the control of large amounts of energy with very little input power. An equally important advancement has taken place in the development of improved rectifiers with reduced losses for high-frequency operation. In addition, the advent of MOS-gated power switches has led to the creation of smart power technology which makes compact systems with built-in diagnostic and protection functions commercially feasible. Although the power semiconductor chips are all made from silicon today, recent analysis has indicated that devices fabricated from silicon carbide have the potential for completely displacing silicon devices in the long range. >