Drift-Diffusion Versus Monte Carlo Simulated ON-Current Variability in Nanowire FETs
Drift-Diffusion Versus Monte Carlo Simulated ON-Current Variability in Nanowire FETs
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DOI：
10.1109/access.2019.2892592
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发表时间：
2019-01-01
期刊：
影响因子：
3.9
通讯作者：
Seoane, Natalia
中科院分区：
文献类型：
--
作者：
Nagy, Daniel;Indalecio, Guillermo;Seoane, Natalia
半导体器件的可变性严重限制了它们在纳米级的性能。通过计算机辅助模拟，可以准确有效地预测可变性的影响，以帮助未来的设备设计。量子修正(QC)漂移扩散(DD)模拟通常被用来估计最先进的非平面器件的可变性，但需要仔细的校准。更精确的模拟方法，如质量控制蒙特卡罗(MC)，被认为是耗时和复杂的。因此，我们预测了TiN金属栅功函数粒度(MGG)和线边缘粗糙度(LER)引起的10 nm栅长全硅纳米线FET的变化，并对QC DD和MC结果进行了严格的比较。在MGG的情况下，我们发现QC DD预测的变率与QC MC预测的变率可以有高达20%的差异。在LER的情况下，我们证明了QC DD可以高估QC MC模拟产生的变异性，其显著误差高达56%。模拟方法之间的误差将随均方根(RMS)高度和最大源漏n型掺杂而变化。我们的结果表明，前述的QC DD模拟技术给出了不准确的通流变化结果。
Variability of semiconductor devices is seriously limiting their performance at nanoscale. The impact of variability can be accurately and effectively predicted by computer-aided simulations in order to aid future device designs. Quantum corrected (QC) drift-diffusion (DD) simulations are usually employed to estimate the variability of state-of-the-art non-planar devices but require meticulous calibration. More accurate simulation methods, such as QC Monte Carlo (MC), are considered time consuming and elaborate. Therefore, we predict TiN metal gate work-function granularity (MGG) and line edge roughness (LER) induced variability on a 10-nm gate length gate-all-around Si nanowire FET and perform a rigorous comparison of the QC DD and MC results. In case of the MGG, we have found that the QC DD predicted variability can have a difference of up to 20% in comparison with the QC MC predicted one. In case of the LER, we demonstrate that the QC DD can overestimate the QC MC simulation produced variability by a significant error of up to 56%. This error between the simulation methods will vary with the root mean square (RMS) height and maximum source/drain n-type doping. Our results indicate that the aforementioned QC DD simulation technique yields inaccurate results for the oN-current variability.