Growth, optical, and electrical properties of nonpolar m-plane ZnO on p-Si substrates with Al2O3 buffer layers
Growth, optical, and electrical properties of nonpolar m-plane ZnO on p-Si substrates with Al2O3 buffer layers
复制标题
具有 Al2O3 缓冲层的 p-Si 衬底上非极性 m 面 ZnO 的生长、光学和电学特性
DOI：
10.1063/1.3673346
复制
发表时间：
2012-01-02
影响因子：
4
通讯作者：
Liu, C.
中科院分区：
文献类型：
--
作者：
Wang, T.;Wu, H.;Liu, C.
采用原子层沉积法在p-Si（111）衬底上生长了非极性m面ZnO薄膜。X射线衍射和高分辨隧道电子显微镜测试表明，ZnO薄膜具有< 10（1）over bar 0>取向，Al 2 O3缓冲层的引入改善了ZnO薄膜的结晶质量，显著增强了ZnO/Si异质结的光致发光，降低了反向漏电流。(C)2012年美国物理学会。[doi：10.1063/1.3673346]
Nonploar m-plane ZnO films were grown on p-Si (111) substrates by using atomic layer deposition. X-ray diffraction and high resolution tunneling electron microscopy measurements showed that the ZnO films were < 10 (1) over bar0 > oriented, and the crystalline quality of ZnO films was improved with an Al2O3 buffer layer, which significantly enhances the photoluminescence and reduces the reverse leakage current of ZnO/Si heterojuction. (C) 2012 American Institute of Physics. [doi:10.1063/1.3673346]