Structure and thickness-dependent lattice parameters of ultrathin epitaxial Pr2O3 films on Si(001)
Structure and thickness-dependent lattice parameters of ultrathin epitaxial Pr2O3 films on Si(001)
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Si(001) 上超薄外延 Pr2O3 薄膜的结构和厚度相关晶格参数
DOI：
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
H. Müssig
中科院分区：
文献类型：
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作者：
T. Schroeder;T.;J. Zegenhagen;C. Wenger;P. Zaumseil;H. Müssig
在Si（001）上异质外延生长的Pr2O3是未来硅基微电子器件中作为高k介电介质的有前途的候选者。用同步辐射掠射x射线衍射研究了技术上重要的厚度范围从1nm到10nm。氧化膜生长为立方Pr2O3相，其（101）平面在Si（001）衬底上以两个正交旋转畴的形式生长。通过监测氧化单晶晶格参数随薄膜厚度从1nm到10nm的变化，可以检测到从几乎完美的伪晶到块状值的转变。
Pr2O3 grown heteroepitaxially on Si(001) is a promising candidate for applications as a high-k dielectric in future silicon-based microelectronics devices. The technologically important thickness range from 1to10nm has been investigated by synchrotron radiation-grazing incidence x-ray diffraction. The oxide film grows as cubic Pr2O3 phase with its (101) plane on the Si(001) substrate in form of two orthogonal rotation domains. Monitoring the evolution of the oxide unit-cell lattice parameters as a function of film thickness from 1to10nm, the transition from almost perfect pseudomorphism to bulk values is detected.