Chiral Domains in Cycloidal Multiferroic Thin Films: Switching and Memory Effects
Chiral Domains in Cycloidal Multiferroic Thin Films: Switching and Memory Effects
复制标题
DOI：
10.1103/physrevlett.107.257601
复制
发表时间：
2011-12-12
影响因子：
8.6
通讯作者：
Fontcuberta, J.
中科院分区：
文献类型：
--
作者：
Fina, I.;Fabrega, L.;Fontcuberta, J.
在某些AmNO(3)钙钛矿中出现的摆线磁序是已知的诱导铁电性的。偏振方向与摆线的传播矢量方向及其手性是垂直的，因此与手性磁区结构直接相关。我们发现，手征磁区的转换过程敏感地依赖于样品的磁电历史。此外，通过适当的场循环，磁序可以显示部分手征记忆。我们认为，记忆是由摆线磁区的电场耦合和手性磁区壁的成核和钉扎产生的，这与其他铁性系统中的磁区结构非常相似。
Cycloidal magnetic order occurring in some AMnO(3) perovskites is known to induce ferroelectricity. The polarization is perpendicular to the propagation vector direction of the cycloid and its chirality, and therefore it is directly related to the chiral domain structure. We show that the switching process of chiral domains is sensitively dependent on the magnetoelectric history of the sample. Moreover, by appropriate field cycling, magnetic order can display partial chiral memory. We argue that memory results from electric field coupling of cycloidal domain and nucleation and pinning of chiral domain walls, much like the domain structure in other ferroic systems.