Band alignment of Sb2O3 and Sb2Se3
Band alignment of Sb2O3 and Sb2Se3
复制标题
Sb_2O_3和Sb_2Se_3的能带排列
DOI：
10.1063/5.0055366
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发表时间：
2021-06-21
影响因子：
3.2
通讯作者：
Veal, Tim D.
中科院分区：
文献类型：
--
作者：
Shiel, Huw;Hobson, Theodore D. C.;Veal, Tim D.
硒化锑（Sb 2Se 3）作为太阳能吸收剂具有良好的应用前景，在光伏领域具有巨大的应用潜力。先前的研究已经报道了在沉积和暴露于空气期间在Sb 2Se 3薄膜的表面处的天然氧化锑（Sb 2 O3）层的生长，这可以影响Sb 2Se 3与后续层之间的接触。在这项研究中，利用光电发射技术对Sb 2Se 3大块晶体和薄膜，调查之间的能带对齐Sb 2Se 3和Sb 2 O3层。通过从大气污染的块状晶体的价带谱中减去原位解理的Sb 2Se 3块状晶体的价带谱，在Sb 2Se 3和Sb 2 O3之间测量到类似于1.72 eV的价带偏移（VBO）。通过Kraut方法在Sb 2 O3和Sb 2Se 3薄膜之间测量的-1.90 eV VBO支持该结果。这两个结果都表明跨接对准，其将对抗通过覆板PV器件的背接触的载流子提取。这项工作产生了更大的洞察带对齐的Sb 2 O3在Sb 2Se 3薄膜的表面，这是至关重要的，以提高这些光伏器件的性能。由AIP Publishing独家授权出版。
Antimony selenide (Sb2Se3) possesses great potential in the field of photovoltaics (PV) due to its suitable properties for use as a solar absorber and good prospects for scalability. Previous studies have reported the growth of a native antimony oxide (Sb2O3) layer at the surface of Sb2Se3 thin films during deposition and exposure to air, which can affect the contact between Sb2Se3 and subsequent layers. In this study, photoemission techniques were utilized on both Sb2Se3 bulk crystals and thin films to investigate the band alignment between Sb2Se3 and the Sb2O3 layer. By subtracting the valence band spectrum of an in situ cleaved Sb2Se3 bulk crystal from that of the atmospherically contaminated bulk crystal, a valence band offset (VBO) of similar to 1.72 eV is measured between Sb2Se3 and Sb2O3. This result is supported by a -1.90 eV VBO measured between Sb2O3 and Sb2Se3 thin films via the Kraut method. Both results indicate a straddling alignment that would oppose carrier extraction through the back contact of superstrate PV devices. This work yields greater insight into the band alignment of Sb2O3 at the surface of Sb2Se3 films, which is crucial for improving the performance of these PV devices. Published under an exclusive license by AIP Publishing.