CO2 laser rapid-thermal-annealing SiOx based metal-oxide-semiconductor light emitting diode
CO2 laser rapid-thermal-annealing SiOx based metal-oxide-semiconductor light emitting diode
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DOI：
10.1063/1.2769962
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发表时间：
2007-08
影响因子：
4
通讯作者：
Chun-Jung Lin;Gong-Ru Lin
中科院分区：
文献类型：
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作者：
Chun-Jung Lin;Gong-Ru Lin
研究了埋埋纳米晶Si的SiOx薄膜上的金属氧化物半导体发光二极管（MOSLED）在6kW / cm2的CO2激光快速热退火（RTA） 1ms条件下的近红外电致发光结构损伤增强。CO2激光RTA诱导的氧相关缺陷能够改善载流子在金属/SiOx界面上的Fowler-Nordheim隧穿机制。CO2激光RTA SiOx薄膜将foer - nordheim隧穿阈值降低至1.8MV / cm2，在2.3mA / cm2电流密度下，将氧化铟锡/SiOx / p-Si / Al MOSLED的EL功率提高至50nW。
Structural damage enhanced near-infrared electroluminescence (EL) of a metal-oxide-semiconductor light emitting diode (MOSLED) made on SiOx film with buried nanocrystallite Si after CO2 laser rapid thermal annealing (RTA) at an optimized intensity of 6kW∕cm2 for 1ms is demonstrated. CO2 laser RTA induced oxygen-related defects are capable of improving Fowler-Nordheim tunneling mechanism of carriers at metal/SiOx interface. The CO2 laser RTA SiOx film reduces Fowler-Nordheim tunneling threshold to 1.8MV∕cm, facilitating an enhanced EL power of an indium tin oxide/SiOx∕p-Si∕Al MOSLED up to 50nW at a current density of 2.3mA∕cm2.