Wafer direct bonding of compound semiconductors and silicon at room temperature by the surface activated bonding method
Wafer direct bonding of compound semiconductors and silicon at room temperature by the surface activated bonding method
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DOI：
10.1016/s0169-4332(97)80187-0
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发表时间：
1997-06-01
影响因子：
6.7
通讯作者：
Suga, T
中科院分区：
文献类型：
--
作者：
Chung, TR;Yang, L;Suga, T
采用表面活化键合方法，在室温超高真空条件下实现了Ⅲ-Ⅴ族化合物半导体晶片与Si晶片的直接键合。程序如下：待结合的表面通过Ar快原子束照射进行溅射清洁和活化，并在轻微压力下接触。GaAs和Si晶片键合非常好，沿键合界面沿着没有检测到任何宏观缺陷。高分辨透射电镜观察表明，在部分键合的界面上，存在一层厚度约为3 nm的非晶中间层。
The surface activated bonding method has been applied to bond the III-V compound semiconductor wafers and Si wafer directly at room temperature in ultra high vacuum. The procedure is as follows: the surfaces to be bonded are sputter-cleaned and activated by Ar fast atom beam irradiation and brought into contact under slight pressure. The GaAs and Si wafers bonded very well, without any macro defect being detected along the bonded interface. An amorphous intermediate layer of about 3 nm thick in most parts of the interface boundary direct bonding without any interlayer between the GaAs and Si wafers existed in a partially bonded interface by high resolution TEM.