Effect of Carrier Blocking Layers on the Emission Characteristics of AlGaN-based Ultraviolet Light Emitting Diodes
Effect of Carrier Blocking Layers on the Emission Characteristics of AlGaN-based Ultraviolet Light Emitting Diodes
复制标题
载流子阻挡层对AlGaN基紫外发光二极管发射特性的影响
DOI：
10.1143/jjap.44.7254
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发表时间：
2005
影响因子：
1.5
通讯作者：
R. Davis
中科院分区：
文献类型：
--
作者：
Ji;D. Fothergill;Xiyao Zhang;Z. Reitmeier;J. Muth;R. Davis
生长了适用于紫外发光二极管的AlGaN基薄膜异质结构，并分别在量子威尔斯阱的顶部和底部制备了p型和n型AlGaN载流子阻挡层。每个器件的主要发射发生在353 nm处。在量子阱顶部具有p型载流子阻挡层的器件中，在所有注入电流值下测量该峰的最高强度;该器件也表现出光输出功率的最高值。在量子威尔斯底部生长n型载流子阻挡层对发光二极管特性有不利影响。中心在540 nm处的宽峰显示出黄色发光，并且存在于从所有装置获得的光谱中。该峰归因于p-GaN对UV发射的吸收和来自p-GaN的再发射和/或归因于通过电流注入来自量子威尔斯内的AlGaN的发光。该峰的强度增加并饱和了与353 nm处的UV发射强度相同的数量级。
AlGaN-based thin film heterostructures suitable for ultraviolet light emitting diodes have been grown and fabricated into working devices with and without p-type and n-type AlGaN carrier-blocking layers at the top and the bottom of the quantum wells, respectively. The principal emission from each device occurred at 353 nm. The highest intensities of this peak were measured at all values of the injection current in the device with a p-type carrier-blocking layer at the top of the quantum well; this device also exhibited the highest values of light output power. Growth of an n-type carrier-blocking layer at the bottom of the quantum wells had an adverse effect on the light emitting diode characteristics. A broad peak centered at ∼540 nm exhibited yellow luminescence and was present in the spectra acquired from all the devices. This peak is attributed to absorption of the UV emission by and re-emission from the p-GaN and/or to the luminescence from the AlGaN within quantum wells by current injection. The intensity of this peak increased and saturated by the same order of magnitude as the intensity of the UV emission at 353 nm.