Electrodeposition of Ni-Si Schottky barriers
Electrodeposition of Ni-Si Schottky barriers
复制标题
镍硅肖特基势垒的电沉积
DOI：
10.1109/tmag.2005.854737
复制
发表时间：
2005
影响因子：
2.1
通讯作者：
C. D. de Groot
中科院分区：
文献类型：
--
作者：
M. Kiziroglou;A. Zhukov;M. Abdelsalam;Xiaoli Li;P. D. de Groot;P. Bartlett;C. D. de Groot
电沉积正被用来直接在不同衬底电阻率的图案化n型硅片上制造磁性微结构。对Ni-Si肖特基势垒进行了表征，发现Ni-Si肖特基势垒具有较低的硅电阻率(1-2/SPL欧米茄//SPL中点/厘米)，具有极低的反向漏电。结果表明，薄膜的电沉积电位、粗糙度和矫顽力之间存在着直接的关系。对于电阻率高达15/SPL欧米茄//SPL Middot/cm的硅上的电沉积，导电种子层或背接触不是强制性的。这表明在硅上电沉积磁性材料可能是磁阻和自旋电子学应用的一种可行的制备技术。
Electrodeposition is being used to fabricate magnetic microstructures directly on patterned n-type Si wafers of various substrate resistivities. The Ni-Si Schottky barrier is characterized and found to be of high quality for relatively low Si resistivities (1-2 /spl Omega//spl middot/cm), with extremely low reverse leakage. It is shown that a direct correlation exists among the electrodeposition potential, the roughness, and the coercivity of the films. A conductive seed layer or a back contact is not compulsory for electrodeposition on Si with resistivities up to 15 /spl Omega//spl middot/cm. This shows that electrodeposition of magnetic materials on Si might be a viable fabrication technique for magnetoresistance and spintronics applications.