Fabrication of an infrared wire-grid polarizer via anisotropical Si etching in KOH solution
Fabrication of an infrared wire-grid polarizer via anisotropical Si etching in KOH solution
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DOI：
10.1364/ao.392883
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发表时间：
2020-06
期刊：
影响因子：
1.9
通讯作者：
I. Yamada;R. Yoshida
中科院分区：
文献类型：
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作者：
I. Yamada;R. Yoshida
采用两束干涉光刻、KOH 溶液中 Si 的各向异性蚀刻以及 Al 的热蒸发来制造红外线栅偏振器。因此，可以在Si光栅上制作具有1μm间距、195nm厚的Al光栅的红外线栅偏振器。 10μm波长下横向磁极化透过率大于48%，该波长下消光比大于22dB。与使用干法蚀刻制造的传统红外偏振器相比，这种偏振器的制造成本要低得多，并且使用更简单的制造工艺。
An infrared wire-grid polarizer was fabricated using two-beam interference lithography, anisotropical etching of Si in KOH solution, and thermal evaporation of Al. Consequently, an infrared wire-grid polarizer with a 1-µm-pitch and 195-nm-thick Al grating could be fabricated on the Si grating. The transmittance of transverse magnetic polarization was greater than 48% at 10-µm wavelength, and the extinction ratio was over 22 dB at this wavelength. This polarizer can be fabricated at a much lower cost and using simpler fabrication processes compared to those for conventional infrared polarizers fabricated using dry etching.