The quantum well self-electrooptic effect device: Optoelectronic bistability and oscillation, and self-linearized modulation

The quantum well self-electrooptic effect device: Optoelectronic bistability and oscillation, and self-linearized modulation
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量子阱自电光效应器件:光电双稳与振荡、自线性化调制

DOI:
10.1109/jqe.1985.1072821
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发表时间:
1985
影响因子:
2.5
通讯作者:
W. Wiegmann
W. Wiegmann
中科院分区:
工程技术3区
文献类型:
--
作者:
D. Miller;D. Chemla;T. Damen;T. Wood;C. Burrus;A. Gossard;W. Wiegmann

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我们报告了量子阱自电光效应器件的扩展实验和理论结果。四种工作模式被证明:1)光学双稳态,2)电双稳态,3)同时光和电子自振荡,和4)自线性调制和光学电平移位。所有这些都可以在室温下用连续激光二极管作为光源观察到。双稳态可以观察到与18 nW的入射功率,或与30 ns的开关时间在1.6 mW的开关功率和速度之间的倒数关系。我们现在还报告了具有低电偏置电压的双稳态(例如,2 V),使用恒定电流负载。负阻自振荡与感性负载观察,这对传输的光束施加自调制。在电流偏置的情况下,获得自线性调制,吸收光功率与电流成线性比例。这是扩展到演示光的光调制和非相干到非相干转换使用一个单独的光电二极管。讨论了器件工作时光电反馈的本质,并讨论了产生非常低的光开关能量(~ 4fJ/ μ m ~ 2)的物理机制。
We report extended experimental and theoretical results for the quantum well self-electrooptic effect devices. Four modes of operation are demonstrated: 1) optical bistability, 2) electrical bistability, 3) simultaneous optical and electronic self-oscillation, and 4) self-linearized modulation and optical level shifting. All of these can be observed at room-temperature with a CW laser diode as the light source. Bistability can be observed with 18 nW of incident power, or with 30 ns switching time at 1.6 mW with a reciprocal relation between switching power and speed. We also now report bistability with low electrical bias voltages (e.g., 2 V) using a constant current load. Negative resistance self-oscillation is observed with an inductive load; this imposes a self-modulation on the transmitted optical beam. With current bias, self-linearized modulation is obtained, with absorbed optical power linearly proportional to current. This is extended to demonstrate light-by-light modulation and incoherent-to-incoherent conversion using a separate photodiode. The nature of the optoelectronic feedback underlying the operation of the devices is discussed, and the physical mechanisms which give rise to the very low optical switching energy (∼4 fJ/ μm2) are discussed.