Planar regions of GaAs (001) prepared by Ga droplet motion
Planar regions of GaAs (001) prepared by Ga droplet motion
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Ga 液滴运动制备的 GaAs (001) 平面区域
DOI：
10.1116/1.4948530
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
D. Jesson
中科院分区：
文献类型：
--
作者：
C. Zheng;W. Tang;D. Jesson
作者描述了一种获得适合于表面科学研究的GaAs（001）平面区的简单方法。该技术，它不需要缓冲层的生长，原子氢源，或作为通量的引入，采用可控的Ga液滴运动，以创建在朗缪尔蒸发的平面轨迹区域。低能电子显微镜/衍射技术应用于监测液滴运动和表征的形态和表面重建。据发现，平面区域表现出原子平坦度的高品质的缓冲层的水平。
The authors describe a simple method for obtaining planar regions of GaAs (001) suitable for surface science studies. The technique, which requires no buffer layer growth, atomic hydrogen source, or the introduction of As flux, employs controllable Ga droplet motion to create planar trail regions during Langmuir evaporation. Low-energy electron microscopy/diffraction techniques are applied to monitor the droplet motion and characterize the morphology and the surface reconstruction. It is found that the planar regions exhibit atomic flatness at the level of a high-quality buffer layer.