Electrical and optical properties of n-type semiconducting chalcogenide glasses in the system Ge-Bi-Se
Electrical and optical properties of n-type semiconducting chalcogenide glasses in the system Ge-Bi-Se
复制标题
Ge-Bi-Se体系中n型半导体硫系玻璃的电学和光学性质
DOI：
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发表时间：
1980
期刊：
影响因子：
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通讯作者：
Masami Tanaka
中科院分区：
文献类型：
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作者：
N. Tohge;T. Minami;Y. Yamamoto;Masami Tanaka
确定了Ge-Bi-Se系统的玻璃形成区，发现玻璃中最大含量为13at.%的铋，玻璃中的Ge含量为20at.%。主要测量了Ge20BixSe80−x(x=0 -13)系列玻璃的电阻率、温差电势和光吸收系数。在x=9~10之间，材料的电阻率下降了约4个数量级，而在x？10时几乎保持不变。热电测量表明，材料的导电类型由p转变为n，并伴随着上述的电阻率急剧下降。在n型玻璃中，局域态尾部的跃迁电导与扩展态的电导是平行的。当掺入2.5at.%以上的铋时，玻璃的光学带隙变化很小，而在x=9-10之间，电导激活能却显著降低。
The glass‐forming region was determined for the system Ge‐Bi‐Se; 13 at.% Bi was found to be incorporated at its maximum content into glasses, the Ge content of which was 20 at.%. Electrical resistivity, thermoelectric power, and optical absorption coefficient were measured mainly on a series of Ge20BixSe80−x glasses (x=0 –13). The resistivity decreased by about four orders of magnitude between x=9 and 10, and remained almost constant for x?10. The thermoelectric measurement showed the change of conduction type from p to n, accompanied by the above‐mentioned abrupt decrease of resistivity. In n‐type glasses, hopping conduction in the tail of localized states was proposed in parallel with conduction in extended states. The optical band gap was very slightly changed with the incorporation of more than 2.5 at.% Bi, in contrast to the remarkable decrease in the activation energy for conduction between x=9 and 10. The discussion based on the concentration of covalent bonds formed in the glasses led to the concl...