Nanomechanical probing of the layer/substrate interface of an exfoliated InSe sheet on sapphire.
Nanomechanical probing of the layer/substrate interface of an exfoliated InSe sheet on sapphire.
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DOI：
10.1038/srep26970
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发表时间：
2016-06-03
影响因子：
4.6
通讯作者：
Kent AJ
中科院分区：
文献类型：
--
作者：
Beardsley R;Akimov AV;Greener JD;Mudd GW;Sandeep S;Kudrynskyi ZR;Kovalyuk ZD;Patanè A;Kent AJ
货车瓦（vdW）层状晶体和异质结构由于在广泛的新兴技术中的潜在应用而引起了极大的兴趣。一个重要的，但往往被忽视，在可实现的设备的发展考虑是声子输运通过结构界面。在这里，我们报告的剥离在蓝宝石衬底上的InSe的界面特性。我们使用皮秒声学技术来探测InSe vdW层状晶体中的声子共振。纳米力学的分析表明，InSe是机械解耦的基板，因此提出了一个弹性不完美的界面。在界面处的声子隔离度高指向热电器件中的应用，或者在器件设计中包括声学过渡层。这些研究结果表明，层状结构的基本性质，因此说明纳米机械探测在纳米层/纳米层或纳米层/衬底界面调谐VDW异质结构的有用性。
Van der Waals (vdW) layered crystals and heterostructures have attracted substantial interest for potential applications in a wide range of emerging technologies. An important, but often overlooked, consideration in the development of implementable devices is phonon transport through the structure interfaces. Here we report on the interface properties of exfoliated InSe on a sapphire substrate. We use a picosecond acoustic technique to probe the phonon resonances in the InSe vdW layered crystal. Analysis of the nanomechanics indicates that the InSe is mechanically decoupled from the substrate and thus presents an elastically imperfect interface. A high degree of phonon isolation at the interface points toward applications in thermoelectric devices, or the inclusion of an acoustic transition layer in device design. These findings demonstrate basic properties of layered structures and so illustrate the usefulness of nanomechanical probing in nanolayer/nanolayer or nanolayer/substrate interface tuning in vdW heterostructures.