Laser damage in silicon: Energy absorption, relaxation, and transport
Laser damage in silicon: Energy absorption, relaxation, and transport
复制标题
DOI：
10.1063/1.4891633
复制
发表时间：
2014-08-07
影响因子：
3.2
通讯作者：
Rethfeld, B.
中科院分区：
文献类型：
--
作者：
Raemer, A.;Osmani, O.;Rethfeld, B.
本文采用双温描述理论研究了超短800 nm激光脉冲辐照硅时瞬态自由载流子密度的变化。一个德鲁德模型来解释高度瞬态的光学参数。我们分析的重要性，考虑这些密度相关的参数，以及德鲁德碰撞频率的选择。此外，简并和输运效应进行了研究。这些过程中的每一个产生的计算损伤阈值的重要性进行了研究。我们报告的损伤阈值的计算，在很宽的范围内的脉冲持续时间与实验结果非常吻合。(C)2014 AIP Publishing LLC.
Silicon irradiated with an ultrashort 800 nm-laser pulse is studied theoretically using a two temperature description that considers the transient free carrier density during and after irradiation. A Drude model is implemented to account for the highly transient optical parameters. We analyze the importance of considering these density-dependent parameters as well as the choice of the Drude collision frequency. In addition, degeneracy and transport effects are investigated. The importance of each of these processes for resulting calculated damage thresholds is studied. We report damage thresholds calculations that are in very good agreement with experimental results over a wide range of pulse durations. (C) 2014 AIP Publishing LLC.