Simulation Study of Individual and Combined Sources of Intrinsic Parameter Fluctuations in Conventional Nano-MOSFETs
Simulation Study of Individual and Combined Sources of Intrinsic Parameter Fluctuations in Conventional Nano-MOSFETs
复制标题
传统纳米 MOSFET 固有参数波动的单独来源和组合来源的仿真研究
DOI：
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发表时间：
2006
影响因子：
3.1
通讯作者：
A. Asenov
中科院分区：
文献类型：
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作者：
G. Roy;A. Brown;F. Adamu;Scott Roy;A. Asenov
在本文中，使用三维统计数值模拟，作者研究了随机离散掺杂剂，线边缘粗糙度（LER），氧化层厚度的变化，在现实的体MOSFET规模为25，18，13和9 nm的本征参数波动。缩放是基于东芝开发的35 nm MOSFET，它也被用于校准作者的“原子”器件模拟器。特别注意的是，通过引入电子和空穴的密度梯度量子校正的漂移扩散模拟中的单个离散掺杂剂的准确分辨率。在LER模拟中，采用了两种情况：第一种情况下，LER遵循国际半导体路线图的规定;第二种情况下，LER保持恒定，接近当前的最佳值。还在35 nm参考器件中模拟了不同来源的固有参数波动的组合效应，并将阈值电压的标准偏差的结果与测量值进行了比较
In this paper, using three-dimensional statistical numerical simulations, the authors study the intrinsic parameter fluctuations introduced by random discrete dopants, line edge roughness (LER), and oxide-thickness variations in realistic bulk MOSFETs scaled to 25, 18, 13 and 9 nm. The scaling is based on a 35 nm MOSFET developed by Toshiba, which has also been used for the calibration of the authors' "atomistic" device simulator. Special attention is paid to the accurate resolution of the individual discrete dopants in the drift-diffusion simulations by introducing density-gradient quantum corrections for both electrons and holes. In the LER simulations, two scenarios have been adopted: in the first one, LER follows the prescriptions of the International Roadmap for Semiconductors; in the second one, LER is kept constant close to the current best values. Combined effects of the different sources of intrinsic parameter fluctuations have also been simulated in the 35 nm reference devices and the results for the standard deviation of the threshold voltage compared to the measured values