Interfacial structure and transport properties of Fe/GaAs(001)
Interfacial structure and transport properties of Fe/GaAs(001)
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DOI：
10.1063/1.3554267
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发表时间：
2011-03
影响因子：
3.2
通讯作者：
L. Fleet;H. Kobayashi;Y. Ohno;Jun-young Kim;C. Barnes;A. Hirohata
中科院分区：
文献类型：
--
作者：
L. Fleet;H. Kobayashi;Y. Ohno;Jun-young Kim;C. Barnes;A. Hirohata
使用高分辨率透射电子显微镜研究了通过分子束外延生长的退火后 Fe/GaAs(001) 薄膜的界面原子结构。图像显示 Fe 薄膜和 GaAs 之间部分混合的 Fe 原子单平面，以及 As 上方存在空位。还介绍了基于这些薄膜的三个终端器件的传输特性，采用全电方法来确认利用汉勒效应的自旋极化电流的注入和检测。讨论了不同界面原子排序对势垒高度的影响。
The interfacial atomic structure of post-annealed Fe/GaAs(001) films, grown by molecular beam epitaxy, has been investigated using high resolution transmission electron microscopy. The images show a single plane of Fe atoms partially mixing between the Fe film and GaAs, along with the presence of vacancies above the As. Transport properties of three terminal devices based on these films are also presented, employing an all electrical method to confirm the injection and detection of a spin-polarized current using the Hanle effect. The effect of differing interfacial atomic ordering on the barrier heights is discussed.