Excitability of chaotic transients in a semiconductor laser
Excitability of chaotic transients in a semiconductor laser
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DOI：
10.1209/0295-5075/79/30004
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发表时间：
2007-06
期刊：
影响因子：
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通讯作者：
O. Ushakov;N. Korneyev;M. Radziunas;H. Wünsche;F. Henneberger
中科院分区：
文献类型：
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作者：
O. Ushakov;N. Korneyev;M. Radziunas;H. Wünsche;F. Henneberger
利用集成光反馈的半导体激光器，在一个连续自治系统中演示了高维混沌瞬态的可激发性。我们的观察背后的一般相空间画像包括在一个混沌吸引子的边界危机与鞍诞生在鞍结分叉的连续波状态。由短光脉冲进行的混沌瞬态的激发具有明显的阈值和不应期。从混沌鞍逃逸是严格的单指数和逃逸时间是一个反幂函数的距离边界危机-尽管高维-临界指数接近1。该装置能够发射具有比内部载流子光子动力学的时间尺度长两个数量级以上的延迟的脉冲。
Using a semiconductor laser with integrated optical feedback, excitability of high-dimensional chaotic transients is demonstrated in a continuous and autonomous system. The generic phase-space portrait behind our observation consists in a boundary crisis of a chaotic attractor with a saddle born in a saddle-node bifurcation of continuous-wave states. The excitation of the chaotic transients, performed by short optical pulses, exhibits a distinct threshold as well as a refractory time. The escape from the chaotic saddle is strictly single-exponential and the escape time is an inverse-power function of the the distance to the boundary crisis with —despite of high dimensionality— a critical exponent close to unity. The device is capable of emitting pulses with a delay that is more than two orders of magnitude longer than the time scale of the internal carrier-photon dynamics.