Direct observation of Na and O impurities at grain surfaces of CuInSe2 thin films
Direct observation of Na and O impurities at grain surfaces of CuInSe2 thin films
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DOI：
10.1116/1.581583
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发表时间：
1999-01
期刊：
影响因子：
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通讯作者：
D. Niles;M. Al‐Jassim;K. Ramanathan
中科院分区：
文献类型：
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作者：
D. Niles;M. Al‐Jassim;K. Ramanathan
利用场发射俄歇电子能谱研究了光伏级CuInSe2薄膜中微量Na和O杂质的空间性质。他们首次直接证明了Na和O存在于CuInSe2 （CIS）薄膜的晶粒表面而不是晶粒内部，并讨论了Na对CIS光电转换效率的提高。
The authors use field-emission Auger electron spectroscopy to investigate the spatial nature of trace Na and O impurities in thin films of photovoltaic-grade CuInSe2 thin films. They give the first direct proof that Na and O reside at grain surfaces and not in the grain interiors of CuInSe2 (CIS) thin films, and discuss the improvement in photovoltaic conversion efficiency of CIS with Na.