Efficiency limits for single junction and tandem solar cells
Efficiency limits for single junction and tandem solar cells
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DOI：
10.1016/j.solmat.2006.06.002
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发表时间：
2006-11-23
影响因子：
6.9
通讯作者：
Miazza, C.
中科院分区：
文献类型：
--
作者：
Meillaud, F.;Shah, A.;Miazza, C.
从辐射复合的热力学考虑和经典二极管方程的半经验考虑出发，确定了单结和串列pn和pn二极管的基本限制。将这些限值与非晶硅（a-Si:H）和微晶硅（mu - c-Si:H）太阳能电池的短路电流、开路电压、填充因子和效率的实际值进行了比较。对于单结电池，主要的效率提高应该是通过更好的光捕获来增加短路电流密度。从本征层的复合效应估计了p-i-n结的局限性。双结电池的效率表现为顶部和底部电池能量间隙的函数，证实了“微晶”串联（a- si:H/mu c-Si:H）是串联太阳能电池的最佳组合。(c) 2006 Elsevier B.V.版权所有
Basic limitations of single-junction and tandem p-n and p-i-n diodes are established from thermodynamical considerations on radiative recombination and semi-empirical considerations on the classical diode equations. These limits are compared to actual values of short-circuit current open-circuit voltage, fill factor and efficiency for amorphous (a-Si:H) and microcrystalline (mu c-Si:H) silicon solar cells. For single-junction cells, major efficiency gains should be achievable by increasing the short-circuit current density by better light trapping. The limitations of p-i-n junctions are estimated from recombination effects in the intrinsic layer. The efficiency of double-junction cells is presented as a function of the energy gap of top and bottom cells, confirming the 'micromorph' tandem (a-Si:H/mu c-Si:H) as an optimum combination of tandem solar cells. (c) 2006 Elsevier B.V. All rights reserved.