Local electronic properties of the graphene-protected giant Rashba-split BiAg 2 surface
Local electronic properties of the graphene-protected giant Rashba-split BiAg 2 surface
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石墨烯保护的巨型 Rashba 分裂 BiAg 2 表面的局部电子特性
DOI：
10.1103/physrevb.95.155428
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
M. Fonin
中科院分区：
文献类型：
--
作者：
Julia Tesch;E. Voloshina;Milan Jubitz;Y. Dedkov;M. Fonin
本文报道了石墨烯与强Rashba分裂BiAg_2 $表面合金界面的制备，并利用扫描隧道显微镜/光谱和密度泛函理论计算研究了其结构和电子性质。在评估的准粒子干涉图案的$\pi$带的$n$-掺杂的石墨烯的未扰动的线性色散被观察到。我们的研究结果还揭示了BiAg$_2$合金的巨大Rashba分裂表面态的完整性质，其在石墨烯的存在下仅表现出适度的向下能量转移。这种效果的密度泛函理论的框架内解释的Bi原子在界面处的向内弛豫和随后的离域的波函数的表面状态。我们的研究结果证明了一个现实的途径，以制备石墨烯保护的巨大的Rashba分裂BiAg$_2$可能的自旋电子应用。
We report the preparation of the interface between graphene and the strong Rashba-split BiAg$_2$ surface alloy and investigatigation of its structure as well as the electronic properties by means of scanning tunneling microscopy/spectroscopy and density functional theory calculations. Upon evaluation of the quasiparticle interference patterns the unpertrubated linear dispersion for the $\pi$ band of $n$-doped graphene is observed. Our results also reveal the intact nature of the giant Rashba-split surface states of the BiAg$_2$ alloy, which demonstrate only a moderate downward energy shift upon the presence of graphene. This effect is explained in the framework of density functional theory by an inward relaxation of the Bi atoms at the interface and subsequent delocalisation of the wave function of the surface states. Our findings demonstrate a realistic pathway to prepare a graphene protected giant Rashba-split BiAg$_2$ for possible spintronic applications.