Impact of fast-recovering NBTI degradation on stability of large-scale SRAM arrays
Impact of fast-recovering NBTI degradation on stability of large-scale SRAM arrays
复制标题
快速恢复 NBTI 退化对大规模 SRAM 阵列稳定性的影响
DOI：
10.1109/essderc.2010.5618438
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
D. Schmitt
中科院分区：
文献类型：
--
作者：
S. Drapatz;K. Hofmann;G. Georgakos;D. Schmitt
本文介绍了直接终止NBTI应力后的大规模SRAM阵列的稳定性分析。虽然静态NBTI对单元和阵列的影响已经得到了很好的研究，但快速恢复组件尚未在SRAM阵列上进行测量。本文提出的新方法分析了直接在电源电压降低到特定值之后的单元翻转，其中结构对NBTI诱导的单元翻转最敏感。因此，读裕度标准是用来表征由于NBTI退化的分辨率下降到1 ms的下降单元的稳定性。应用这种方法，静态和动态NBTI的影响是在65 nm的低功耗CMOS技术测量。在应激后1 ms和10.000 s之间，NBTI诱导的细胞翻转数量减少了几乎一半。
This paper presents stability analysis of large-scale SRAM arrays directly after terminating NBTI stress. While the impact of static NBTI is well examined for cells and arrays, the fast-recovering component was not yet measured on SRAM arrays. The novel method presented here analyzes the flipping of cells directly after the supply voltage was lowered to a specific value where the structure is most sensitive for NBTI induced cell flips. Thus, read margin criterion is used to characterize the decreasing cell stability due to NBTI degradation with a resolution down to 1 ms. Applying this method, the impact of static and dynamic NBTI is measured in a 65 nm low power CMOS technology. Between 1 ms and 10.000 s after stress, the NBTI induced number of cell flips decreases by almost one half.