Optical and structural investigation of stain‐etched silicon
Optical and structural investigation of stain‐etched silicon
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DOI：
10.1063/1.114429
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发表时间：
1995-10
影响因子：
4
通讯作者：
S. Kalem;M. Rosenbauer
中科院分区：
文献类型：
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作者：
S. Kalem;M. Rosenbauer
我们报告了通过化学蚀刻技术在 p 型硅晶片上生长的多孔硅 (por-Si) 层的光学和振动特性。结果表明光致发光（PL）强度与多氢化物配合物（SiHn，n≥2）之间存在相关性。然而，对于来自不含多氢化物的层的一氢化物物质也发现了类似的相关性。结果表明，氧化量的增加是导致 PL 发射带变宽的原因。此外，在 710 cm−1 处观察到一个新的红外吸收带，该吸收带被分配给多氢化物，这表明这些层中的氢原子有一个新的局部键合环境。
We report on optical and vibrational properties of porous silicon (por‐Si) layers grown on p‐type Si wafers by electroless etching technique. The results indicate a correlation between the photoluminescence (PL) intensity and the multihydride complexes (SiHn with n≥2). However, similar correlation was also found for monohydride species from the layers containing no multihydrides. It is shown that the increase in the amount of oxidation is responsible for broadening of the PL emission band. Furthermore, a new IR absorption band is observed at 710 cm−1 and assigned to multihydrides suggesting a new local bonding environment for hydrogen atoms in these layers.