Capacitor test simulation of retention and imprint characteristics for ferroelectric memory operation
Capacitor test simulation of retention and imprint characteristics for ferroelectric memory operation
复制标题
铁电存储器操作的保留和压印特性的电容器测试模拟
DOI：
10.1080/10584589708013030
复制
发表时间：
1997
影响因子：
0.7
通讯作者：
L. Kammerdiner
中科院分区：
文献类型：
--
作者：
S. Traynor;T. D. Hadnagy;L. Kammerdiner
摘要铁电存储器件容易由于简单的保持力损失或由于印记而失效。本文所述的保留和印记之间的差异取决于设备的测试历史。设计了一种脉冲电容器测试，以模拟典型存储单元在时间和温度应力后的信号。测试序列由用于比较开关分量与非开关分量的单个脉冲组成，其中差异是可用于存储器操作的信号。已经发现，当对固定烘烤温度应力的对数时间作图时，该信号产生一条直线。
Abstract Ferroelectric memory devices are subject to failure due to both a simple loss of retention or due to imprint. The difference between retention and imprint as described here depends on the test history of the device. A pulsed capacitor test has been devised to simulate the signal available to a typical memory cell after time and temperature stress. The test sequence consists of individual pulses used to compare the switched component to the non-switched component with the difference being the signal available for memory operation. It has been found that this signal when plotted versus log time for a fixed bake temperature stress produces a straight line.