Super-High-Frequency SAW Resonators on AlN/Diamond
Super-High-Frequency SAW Resonators on AlN/Diamond
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DOI：
10.1109/led.2012.2183851
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发表时间：
2012-04-01
影响因子：
4.9
通讯作者：
Calle, F.
中科院分区：
文献类型：
--
作者：
Rodriguez-Madrid, J. G.;Iriarte, G. F.;Calle, F.
这封信描述了在AlN/金刚石异质结构上制造频率超过10 GHz的高性能表面声波（SAW）谐振器的过程。在氮化铝/金刚石系统上的SAW器件设计中，压电层厚度是一个关键参数。研究了薄膜厚度对SAW器件响应的影响。优化的薄膜结合先进的电子束光刻技术，可以制造出手指宽度和间距为200 nm的单端口SAW谐振器，工作在10-14 GHz范围内，带外抑制高达36 dB。
This letter describes the procedure to manufacture high-performance surface acoustic wave (SAW) resonators on AlN/diamond heterostructures working at frequencies beyond 10 GHz. In the design of SAW devices on AlN/diamond systems, the thickness of the piezoelectric layer is a key parameter. The influence of the film thickness on the SAW device response has been studied. Optimized thin films combined with advanced e-beam lithographic techniques have allowed the fabrication of one-port SAW resonators with finger width and pitch of 200 nm operating in the 10-14 GHz range with up to 36 dB out-of-band rejection.