Room-temperature electrically pumped InGaN-based microdisk laser grown on Si
Room-temperature electrically pumped InGaN-based microdisk laser grown on Si
复制标题
Si 上生长的室温电泵 InGaN 微盘激光器
DOI：
10.1364/oe.26.005043
复制
发表时间：
2018-02-19
期刊：
影响因子：
3.8
通讯作者：
Yang, Hui
中科院分区：
文献类型：
--
作者：
Feng, Meixin;He, Junlei;Yang, Hui
硅光子学一直渴望在室温下电驱动的高效片上光源。具有低损耗回音壁模式的微盘激光器可以通过紧密耦合的片上波导有效地发射出定向激光，特别适合于光子集成。传统的底切结构、较差的材料质量以及干法刻蚀形成的GaN微盘质量有限，阻碍了Si基GaN微盘电泵浦激光器的实现。在这里，我们报告了一个成功的制作室温电泵浦InGaN基微盘激光器生长在Si上。一个戏剧性的缩小的电致发光光谱线宽和一个明显的不连续性的斜率绘制作为注入电流的函数的光输出功率提供了一个明确的证据激射。这是首次在室温下在Si上生长的InGaN基微盘激光器中观察到电泵浦激光。(C)根据OSA开放获取出版协议的条款，2018年美国光学学会
Silicon photonics has been longing for an efficient on-chip light source that is electrically driven at room temperature. Microdisk laser featured with low-loss whispering gallery modes can emit directional lasing beam through a closely coupled on-chip waveguide efficiently, and hence is particularly suitable for photonics integration. The realization of electrically pumped III-nitride microdisk laser grown on Si has been impeded by the conventional undercut structure, poor material quality, and a limited quality of GaN microdisk formed by dry etching. Here we report a successful fabrication of room-temperature electrically pumped InGaN-based microdisk lasers grown on Si. A dramatic narrowing of the electroluminescence spectral line-width and a clear discontinuity in the slope of light output power plotted as a function of the injection current provide an unambiguous evidence of lasing. This is the first observation of electrically pumped lasing in InGaN-based microdisk lasers grown on Si at room temperature. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement