Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands
Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands
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DOI：
10.1088/0957-4484/18/44/445201
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发表时间：
2007-11-07
期刊：
影响因子：
3.5
通讯作者：
Hsueh, T. H.
中科院分区：
文献类型：
--
作者：
Chiu, C. H.;Lu, T. C.;Hsueh, T. H.
报道了利用电感耦合等离子体反应离子刻蚀（ICP-RIE）和光增强化学（PEC）湿氧化工艺通过自组装Ni纳米掩模制备InGaN/GaN纳米棒发光二极管（LED）。与所生长的结构相比，实现了由PEC工艺制成的纳米棒的光致发光（PL）强度的六倍的增强。从PL测量中观察到的峰值波长显示，对于没有PEC氧化过程的纳米棒，蓝移3.8 nm，对于用PEC氧化过程制成的纳米棒，蓝移8.6 nm。此外，我们已经证明了电泵浦纳米棒LED的电致发光光谱显示出更高的效率和10.5 nm的蓝移峰相对于生长的LED样品。
We report the fabrication of InGaN/GaN nanorod light-emitting diodes (LEDs) using inductively coupled plasma reactive-ion etching (ICP-RIE) and a photo-enhanced chemical (PEC) wet oxidation process via self-assembled Ni nanomasks. An enhancement by a factor of six times in photoluminescence (PL) intensities of nanorods made with the PEC process was achieved in comparison to that of the as-grown structure. The peak wavelength observed from PL measurement showed a blue shift of 3.8 nm for the nanorods made without the PEC oxidation process and 8.6 nm for the nanorods made with the PEC oxidation process from that of the as-grown LED sample. In addition, we have demonstrated electrically pumped nanorod LEDs with the electroluminescence spectrum showing more efficiency and a 10.5 nm blue-shifted peak with respect to the as-grown LED sample.