Improved rate equations for external cavity semiconductor lasers
Improved rate equations for external cavity semiconductor lasers
复制标题
改进的外腔半导体激光器速率方程
DOI：
10.1109/3.29296
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发表时间：
1989
期刊：
影响因子：
--
通讯作者：
Tao Shang
中科院分区：
文献类型：
--
作者：
Hui Rong;Tao Shang
本文导出了一组改进的外腔半导体激光器朗之万速率方程，它既可用于求解瞬态问题，也可用于求解稳态问题。给出了啁啾减小、谱线窄化和动态稳定度之间的简单关系。报道了一种由1.3 μ m埋层异质结激光二极管和4mm梯度折射率棒组成的外耦合腔半导体激光器的实验研究。由于其强的光反馈，它提供了一个稳定的单模，这是不敏感的环境扰动。这与理论结果一致。连续观察12 h未出现模态跳变。>
A set of improved Langevin rate equations for external-cavity semiconductor lasers which can be used to solve transient as well as steady-state problems is derived. A simple relationship among chirp reduction, line narrowing and dynamic stability is given. An experiment on an external-coupled-cavity semiconductor laser consisting of a 1.3- mu m buried-heterostructure laser diode with an antireflection (AR)-coated facet and a 4-mm GRIN rod is reported. Because of its strong optical feedback, it provides a stable single mode, which is not sensitive to the environmental perturbations. This agrees with the theoretical results. No mode jumping occurred during 12 h continuous observation. >