High quality ITO film formation by the simultaneous use of cluster ion beam and laser irradiation
High quality ITO film formation by the simultaneous use of cluster ion beam and laser irradiation
复制标题
同时使用簇离子束和激光照射形成高质量的 ITO 薄膜
DOI：
10.1016/s0254-0584(01)00479-5
复制
发表时间：
2002
影响因子：
4.6
通讯作者：
J. Matsuo
中科院分区：
文献类型：
--
作者：
G. Takaoka;Dai Yamazaki;J. Matsuo
为了制备掺锡氧化铟(ITO)薄膜，我们在不同的衬底温度(Ts)下，结合O2团簇离子的辐照，在玻璃衬底上沉积了金属铟(In)和锡(Sn)。研究了所制备的ITO薄膜的电学和光学性质与温度的关系。薄膜的电阻率随衬底温度的升高而降低，在ts=30 0°C时，薄膜的电阻率为1.1×10−4Ωcm，这可能是由于薄膜的晶态有所改善以及载流子浓度的增加所致。另一方面，在室温(RT)到300°C的温度范围内，透明度几乎是恒定的，其透明度高于90%。此外，我们还利用O2团簇离子束和KrF激光同时照射的方法制备了ITO薄膜。在TS=30 0°C时，获得了电阻率为1.0×10−4Ωcm、透明度大于90%的高质量ITO薄膜，载流子密度为2.5×10 2 1 cm−3。在ITO薄膜形成过程中，激光照射以及O2团簇离子的照射都是有效的，特别是对掺杂的锡原子进行退火和活化。
In order to prepare tin-doped indium oxide (ITO) films, we have deposited metallic indium (In) and tin (Sn) on a glass substrate at various substrate temperatures (Ts) in conjunction with irradiation of O2cluster ions. The temperature dependence of the electrical and optical properties of the ITO films prepared was investigated. The resistivity decreased with increasing substrate temperature, and a resistivity of 1.1×10−4Ωcm was obtained at Ts=300°C. This is considered to be due to some improvement of the crystalline state of the films as well as an increase of the carrier density. On the other hand, the transparency was found to be almost constant in the temperature region from room temperature (RT) to 300°C, and it was higher than 90%. In addition, we have prepared ITO films by the simultaneous use of an O2cluster ion beam and KrF laser irradiation. High quality ITO films with a lower resistivity of 1.0×10−4Ωcm and a transparency above 90% was able to be formed at Ts=300°C. A high carrier density of 2.5×1021cm−3was obtained. Laser irradiation during ITO film formation as well as irradiation of O2cluster ions was effective particularly for annealing and activating doped Sn atoms.