Polarization-Independent Photoluminescence from Columnar InAs/GaAs Self-Assembled Quantum Dots
Polarization-Independent Photoluminescence from Columnar InAs/GaAs Self-Assembled Quantum Dots
复制标题
柱状 InAs/GaAs 自组装量子点的偏振无关光致发光
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
M. Sugawara
中科院分区：
文献类型：
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作者：
T. Kita;O. Wada;H. Ebe;Y. Nakata;M. Sugawara
研究了柱状InAs/GaAs自组装量子点（QDs）的光致发光的线极化特性。利用stranski - krstanov模式InAs-island层紧密叠加制备柱状量子点。PL极化的各向异性取决于堆叠层数。单岛层样品显示出较强的横向电（TE）模式PL，随着堆叠层数的增加，TE模式PL与横向磁（TM）模式PL的PL强度比减小。然后，TE/ tm模式的pl强度比在堆叠层数为9之后反转。我们的研究结果表明，通过控制堆叠层数可以实现与极化无关的转变。
The linear-polarization character of photoluminescence (PL) from the cleaved edge surface of columnar InAs/GaAs self-assembled quantum dots (QDs) has been investigated. The columnar QDs were fabricated by closely stacking the Stranski-Krastanov-mode InAs-island layers. Anisotropy of the PL polarization depends on the stacking layer number. The single-island-layer sample shows strong transverse-electric (TE)-mode PL. With increasing stacking layer number, the PL-intensity ratio of TE-mode PL to transverse-magnetic (TM)-mode PL decreases. Then, the TE/TM-mode PL-intensity ratio is inverted beyond the stacking layer number of 9. Our results suggest that a polarization-independent transition can be accomplished by controlling the stacking layer number.