Underlayer effect on the soft magnetic, high frequency, and magnetostrictive properties of FeGa thin films
Underlayer effect on the soft magnetic, high frequency, and magnetostrictive properties of FeGa thin films
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DOI：
10.1063/5.0011873
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发表时间：
2020-07
影响因子：
3.2
通讯作者：
Adrian Acosta;Kevin Fitzell;J. Schneider;Cunzheng Dong;Z. Yao;R. Sheil;Y. Wang;G. Carman;
中科院分区：
文献类型：
--
作者：
Adrian Acosta;Kevin Fitzell;J. Schneider;Cunzheng Dong;Z. Yao;R. Sheil;Y. Wang;G. Carman;
研究了溅射沉积在2.5nm Ta、Cu和Ni80Fe20（NiFe）衬底上的Fe_（81）Ga_（19）（FeGa）薄膜的软磁性能、显微结构和磁致伸缩性能。与底层沉积的薄膜表现出增加的面内单轴各向异性和面内双折射率下降。在FeGa中观察到最小的矫顽力与NiFe底层在15 Oe，相比直接沉积在Si上的膜的84 Oe。此外，对于100 nm的FeGa薄膜，NiFe底层的有效吉尔伯特阻尼系数（αeff）可低至0.044。的矫顽力和αeff被证明是进一步降低作为FeGa膜厚度的函数。FeGa薄膜也能够保持或增加其饱和磁致伸缩时，沉积在底层。这种增强归因于底层的影响，以促进增加的（110）膜织构和更小的晶粒尺寸，这与溅射FeGa膜的底层的晶格匹配相关。在所研究的底层中，NiFe促进FeGa薄膜的软磁性能的最佳增强，使其成为应变介导的磁电和微波器件应用的有吸引力的材料。
The soft magnetic, microstructural, and magnetostrictive properties of Fe81Ga19 (FeGa) film sputter deposited onto 2.5-nm Ta, Cu, and Ni80Fe20 (NiFe) underlayers were investigated. The films deposited with an underlayer showed increased in-plane uniaxial anisotropy and a decrease in in-plane coercivity. The smallest coercivity was observed in FeGa deposited with a NiFe underlayer at 15 Oe, compared to 84 Oe for films deposited directly on Si. In addition, an effective Gilbert damping coefficient (αeff) as low as 0.044 was achieved for a 100-nm FeGa film with a NiFe underlayer. The coercivity and αeff were shown to decrease further as a function of FeGa film thickness. The FeGa films were also able to retain or increase their saturation magnetostriction when deposited on an underlayer. This enhancement is attributable to the impact of the underlayer to promote an increased (110) film texture and smaller grain size, which is correlated to the lattice match of the underlayer of the sputtered FeGa film. Among the underlayers studied, NiFe promoted the best enhancement in the soft magnetic properties for FeGa thin films, making it an attractive material for both strain-mediated magnetoelectric and microwave device applications.