Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high- k ALD ZrO 2 dielectric
Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high- k ALD ZrO 2 dielectric
复制标题
具有高 k ALD ZrO 2 电介质的超宽带隙 AlGaN 金属氧化物半导体异质结构场效应晶体管
DOI：
10.1088/1361-6641/ab4781
复制
发表时间：
2019
影响因子：
1.9
通讯作者：
Simin, Grigory
中科院分区：
文献类型：
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作者：
Mollah, Shahab;Gaevski, Mikhail;Chandrashekhar, MVS;Hu, Xuhong;Wheeler, Virginia;Hussain, Kamal;Mamun, Abdullah;Floyd, Richard;Ahmad, Iftikhar;Simin, Grigory
报道了采用原子层淀积工艺制备的Al 0.65Ga0.35N/Al 0.4Ga0.6N金属氧化物半导体异质结场效应晶体管（MOSHFET）。从频率依赖的电容-电压（CV）特性中提取，氧化物栅极导致界面态陷阱密度为102 × 10 12 cm− 2。在相同材料上的比较研究表明，与肖特基栅器件相比，ZrO 2 MOSHFET的栅漏电流低5个数量级，通断电流比高约4个数量级，阈值电压低3.5V.
We report on Al 0.65 Ga 0.35 N/Al 0.4 Ga 0.6 N metal oxide semiconductor heterojunction field-effect transistor (MOSHFET) with high-k ZrO 2 gate-dielectric deposited using atomic layer deposition process. As extracted from frequency dependent capacitance–voltage (CV) characteristics, the oxide gates resulted in an interfacial state trap density of∼ 2× 10 12 cm− 2. A comparative study, on the same material, shows the gate-leakage current of the ZrO 2 MOSHFETs to be lower by five orders; their ON/OFF current ratio (∼ 10 7) to be higher by about four orders and their threshold voltage to decrease (less negative) by 3.5 V with respect to the Schottky gate devices.