High-injection carrier dynamics generated by MeV heavy ions impacting high-speed photodetectors
High-injection carrier dynamics generated by MeV heavy ions impacting high-speed photodetectors
复制标题
MeV 重离子撞击高速光电探测器产生的高注入载流子动力学
DOI:
10.1063/1.1947381
复制
发表时间:
2005
影响因子:
3.2
通讯作者:
H. Itoh
中科院分区:
文献类型:
--
作者:
J. Laird;T. Hirao;S. Onoda;H. Itoh
The generation of single event transients generated by the impact of high-energy ions in high-speed photodetectors leads to bit error rate degradation in optical communications in radiation hard environments such as space. High-energy heavy ions, in particular, generate a submicron electron-hole pair plasma with a picosecond temporal profile that results in ultrahigh-injection carrier dynamics which induce large space-charge effects. These space-charge effects disturb the local electric field, thereby determining the peak and duration of a single event transient. In this paper, we examine the transient response of Si p-i-n photodetectors irradiated with focused single MeV heavy ions for a range of ion energies chosen to ensure the same end of range but different average plasma densities. We discuss the role of high-injection effects on the evolving spatiotemporal response with the aid of three-dimensional technology computer-aided design software. The result of both measurement and simulation points to ch...