Fabrication of domain inverted ridge waveguide in ion-sliced LiNbO3 for wavelength conversion devices
Fabrication of domain inverted ridge waveguide in ion-sliced LiNbO3 for wavelength conversion devices
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DOI：
10.1109/moc.2015.7416469
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发表时间：
2015-10
期刊：
影响因子：
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通讯作者：
Keisuke Tanaka;T. Suhara
中科院分区：
文献类型：
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作者：
Keisuke Tanaka;T. Suhara
与传统的钛扩散和退火/质子交换光波导相比，高折射率对比度薄膜脊形光波导对光的限制更强。为了实现高效率的波长转换器件，我们在粘结离子切片LiNbO_3晶体中用电压法制作了磁区倒置结构，用质子交换加速刻蚀法制备了脊形光波导。
High-refractive-index-contrast thin film ridge waveguides can confine light more strongly than conventional Ti-indiffused and annealed/proton-exchanged waveguides. We fabricated domain inverted structures by voltage application method and ridge waveguides by proton-exchange accelerated etching in bonded ion-sliced thin film LiNbO3 crystals for implementation of highly efficient wavelength conversion devices.