In situ Observation of Initial Nucleation and Growth Processes in Supercritical Fluid Deposition of Copper
In situ Observation of Initial Nucleation and Growth Processes in Supercritical Fluid Deposition of Copper
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DOI：
10.1143/jjap.47.885
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发表时间：
2008-02
影响因子：
1.5
通讯作者：
T. Momose;M. Sugiyama;Y. Shimogaki
中科院分区：
文献类型：
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作者：
T. Momose;M. Sugiyama;Y. Shimogaki
通过测量表面对可见白色光的反射率，研究了超临界流体沉积（SCFD）过程中Cu的初始成核和聚结过程。在770 nm处的反射率是敏感的初始成核，因此，Cu-SCFD的成核和聚结温度可以很容易地通过这种原位技术监测。发现Cu-SCFD的成核温度与前驱体浓度无关，这表明在高浓度下源前驱体的强吸附和表面饱和。以Cu（tmhd）2为前体，H2浓度高达0.39 mol/L时，可使成核温度从215 ° C降至180 °C。高的H2浓度对于实现沉积的Cu膜的平滑表面形态和在聚结阶段使膜变薄也是有效的，这可能是因为具有高数量密度的初始成核。在0.39 mol/L的高H2浓度下，成功制备了超大规模集成电路（ULSI）中作为种子层的10 nm厚连续Cu膜。
The initial nucleation and coalescence of Cu by supercritical fluid deposition (SCFD) were monitored by measuring the surface reflectivity of visible white light. The reflectivity at 770 nm is sensitive to initial nucleation, thus, the nucleation and coalescence temperatures of Cu-SCFD can be easily monitored by this in situ technique. The nucleation temperature of Cu-SCFD was found to be independent of the precursor concentration, which suggests a strong adsorption and surface saturation of the source precursor at high concentration. A high H2 concentration up to 0.39 mol/L with Cu(tmhd)2 as a precursor can decrease the nucleation temperature from 215 to 180 °C. A high H2 concentration is also effective for realizing a smooth surface morphology of the deposited Cu film and for making the film thin at the coalescence stage probably because of the initial nucleation with a high number density. The fabrication of a 10-nm-thick continuous Cu film, which is required as a seed layer in ultralarge scale integration (ULSI), was successfully demonstrated with a high H2 concentration of 0.39 mol/L.