Quantum confinement effect in self-assembled, nanometer silicon dots
Quantum confinement effect in self-assembled, nanometer silicon dots
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自组装纳米硅点的量子限制效应
DOI：
10.1063/1.122923
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发表时间：
1998
影响因子：
4
通讯作者：
M. Hirose
中科院分区：
文献类型：
--
作者：
S. Ding;M. Ikeda;M. Fukuda;S. Miyazaki;M. Hirose
用高分辨x射线光电子能谱测量了在超薄的SiO_2/Si衬底上低压化学气相沉积生长的自组装硅量子点的价带第一亚能带能量作为价带密度顶端的能量位移。随着点尺寸的减小，价带最大值向更高的结合能系统移动，这与理论预测是一致的。在确定价带边能量时，考虑了测量过程中光电子发射对硅点和SiO_2层的充电效应。
The first subband energy at the valence band of self-assembled silicon quantum dots grown by low-pressure chemical vapor deposition on ultrathin SiO2/Si substrates has been measured as an energy shift at the top of the valence band density of states by using high-resolution x-ray photoelectron spectroscopy. The systematic shift of the valence band maximum towards higher binding energy with decreasing the dot size is shown to be consistent with theoretical prediction. The charging effects of the silicon dots and the SiO2 layer by photoelectron emission during the measurements have been taken into account in determining the valence-band-edge energy.