Interface properties for GaAs/InGaAlP heterojunctions by the capacitance‐voltage profiling technique
Interface properties for GaAs/InGaAlP heterojunctions by the capacitance‐voltage profiling technique
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通过电容电压分析技术研究 GaAs/InGaAlP 异质结的界面特性
DOI：
10.1063/1.98028
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发表时间：
1987
影响因子：
4
通讯作者：
Y. Ohba
中科院分区：
文献类型：
--
作者：
M. Watanabe;Y. Ohba
研究了通过金属有机化学气相沉积制备的 GaAs/In0.5(Ga1−xAlx)0.5P 异质结的导带不连续性 ΔEc 和界面电荷密度 σ。研究了 x 从 0 到 1 时 ΔEc 和 σ 对 Al 成分 x 的依赖性。还检查了 In0.5Al0.5P/In0.5Ga0.5P 异质结。结果表明，GaAs/In0.5(Ga1−xAlx)0.5P 的价带不连续性 ΔEv 是 x 的线性函数，并且大于 ΔEc，与 InAlP/InGaP 异质结的结果相当一致。发现 GaAs/InGaAlP 的 σ 值比 GaAs/AlGaAs 和 InAlP/InGaP 异质结的 σ 值大一个数量级。
The conduction‐band discontinuity ΔEc and interface charge density σ have been studied for GaAs/In0.5(Ga1−xAlx)0.5P heterojunctions, prepared by metalorganic chemical vapor deposition. The dependences of ΔEc and σ on Al composition x were investigated for x from 0 to 1. The In0.5Al0.5P/ In0.5Ga0.5P heterojunction was also examined. The results suggest that the valence‐band discontinuity ΔEv for GaAs/In0.5(Ga1−xAlx)0.5P is a linear function of x and is larger than ΔEc, being in reasonable agreement with results on the InAlP/InGaP heterojunction. The σ values for GaAs/InGaAlP were found to be one order of magnitude larger than those for GaAs/AlGaAs and InAlP/InGaP heterojunctions.