Graphene nanomesh as highly sensitive chemiresistor gas sensor.
Graphene nanomesh as highly sensitive chemiresistor gas sensor.
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DOI:
10.1021/ac3012895
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发表时间:
2012-10-02
影响因子:
7.4
通讯作者:
Mulchandani A
中科院分区:
文献类型:
--
作者:
Paul RK;Badhulika S;Saucedo NM;Mulchandani A
Graphene is a one atom thick carbon allotrope with all surface atoms that has attracted significant attention as a promising material as the conduction channel of a field-effect transistor and chemical field-effect transistor sensors. However, the zero bandgap of semimetal graphene still limits its application for these devices. In this work, ethanol-chemical vapor deposition (CVD) grown p-type semiconducting large-area monolayer graphene film was patterned into nanomesh by the combination of nanosphere lithography and reactive ion etching and evaluated as field-effect transistor and chemiresistor gas sensors. The resulting neck-width of the synthesized nanomesh was about ~20 nm comprised of the gap between polystyrene spheres that was formed during the reactive ion etching process. The neck-width and the periodicities of the graphene nanomesh could be easily controlled depending the duration/power of RIE and the size of PS nanospheres. The fabricated GNM transistor device exhibited promising electronic properties featuring high drive current and ION/IOFF ratio of about 6, significantly higher than its film counterpart. Similarly, when applied as chemiresistor gas sensor at room temperature, the graphene nanomesh sensor showed excellent sensitivity towards NO2 and NH3, significantly higher than their film counterparts. The ethanol-based graphene nanomesh sensors exhibited sensitivities of about 4.32%/ppm in NO2 and 0.71%/ppm in NH3 with limit of detections of 15 ppb and 160 ppb, respectively. Our demonstrated studies on controlling the neck width of the nanomesh would lead to further improvement of graphene-based transistors and sensors.