Ion-beam texturing of uniaxially textured Ni films
Ion-beam texturing of uniaxially textured Ni films
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DOI：
10.1063/1.1957121
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发表时间：
2005-07
影响因子：
4
通讯作者：
S. Park;D. Norton;V. Selvamanickam
中科院分区：
文献类型：
--
作者：
S. Park;D. Norton;V. Selvamanickam
报道了单轴织构镍薄膜经氩离子辐照形成双轴织构。离子束辐照与沉积不同时发生。相反，离子束照射在单轴纹理膜表面，没有冲击沉积通量，这与传统的离子束辅助沉积不同。单轴织构通过非离子束工艺建立，通过离子束轰击作用在单轴膜上形成平面内织构。在这种连续离子束织构方法中，晶粒排列是由选择性蚀刻和晶粒过度生长驱动的。
The formation of biaxial texture in uniaxially textured Ni thin films via Ar-ion irradiation is reported. The ion-beam irradiation was not simultaneous with deposition. Instead, the ion beam irradiates the uniaxially textured film surface with no impinging deposition flux, which differs from conventional ion-beam-assisted deposition. The uniaxial texture is established via a nonion beam process, with the in-plane texture imposed on the uniaxial film via ion beam bombardment. Within this sequential ion beam texturing method, grain alignment is driven by selective etching and grain overgrowth.