Realization of 10Tbit∕in.2 memory density and subnanosecond domain switching time in ferroelectric data storage
Realization of 10Tbit∕in.2 memory density and subnanosecond domain switching time in ferroelectric data storage
复制标题
DOI：
10.1063/1.2140894
复制
发表时间：
2005-12
影响因子：
4
通讯作者：
Yasuo Cho;S. Hashimoto;N. Odagawa;K. Tanaka;Y. Hiranaga
中科院分区：
文献类型：
--
作者：
Yasuo Cho;S. Hashimoto;N. Odagawa;K. Tanaka;Y. Hiranaga
铁电材料的纳米倒畴点在超高密度可重写数据存储系统中具有潜在的应用前景。本文提出了一种基于扫描非线性介电显微镜和铁电单晶钽酸锂薄膜的数据存储系统。通过畴工程，成功地形成了数据密度在10.1Tbit∕∕in以上的纳米级倒畴点。实现了2和亚纳秒（500ps）的域切换速度。此外，实际的信息存储密度为1bit∕in.2
Nanosized inverted domain dots in ferroelectric materials have potential application in ultrahigh-density rewritable data storage systems. Herein, a data storage system is presented based on scanning nonlinear dielectric microscopy and a thin film of ferroelectric single-crystal lithium tantalite. Through domain engineering, nanosized inverted domain dots have been successfully formed at a data density above 10.1Tbit∕in.2 and subnanosecond (500ps) domain switching speed has been achieved. Moreover, actual information storage is demonstrated at a density of 1Tbit∕in.2