High-voltage high-frequency inverter using 3.3kV SiC MOSFETs
High-voltage high-frequency inverter using 3.3kV SiC MOSFETs
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使用 3.3kV SiC MOSFET 的高压高频逆变器
DOI：
10.1109/epepemc.2012.6397275
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
L. Stevanovic
中科院分区：
文献类型：
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作者：
R. Lai;Lei Wang;J. Sabate;A. Elasser;L. Stevanovic
高电压SiC MOSFET实现了高开关频率操作，否则只有更复杂的架构（如多电平或交错逆变器）才有可能实现。本文提出了一种采用3.3kV SiC MOSFET的全桥逆变器，该逆变器采用简单的硬开关PWM技术实现高压（2100V直流母线）、高频（62.5kHz）运行。给出了3.3kV SiC器件的开关特性，并详细分析了寄生参数的影响。分析表明，微小的杂散输出电容，这主要是由与PCB实现的母线引入，可以有显着的SiC器件的开关波形的影响。实验结果验证了所提出的逆变器的性能。
High voltage SiC MOSFETs enable high switching frequency operation that would otherwise be only possible with more complex architectures such as multilevel or interleaved inverters. In this paper, a full bridge inverter using 3.3kV SiC MOSFETs is presented to achieve high-voltage (2100V dc bus), high-frequency (62.5kHz) operation with a simple hard switching PWM technique. The switching characteristics of the 3.3kV SiC device are presented and the effect of the parasitic parameters is analyzed in details. The analysis shows that the tiny stray output capacitor, which is mainly introduced by the bus-bars implemented with a PCB, can have a significant impact on the switching waveforms of the SiC devices. The reported experimental results validate the performance of the proposed inverter.