Reduced thermal conductivity of isotopically modulated silicon multilayer structures
Reduced thermal conductivity of isotopically modulated silicon multilayer structures
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同位素调制硅多层结构的热导率降低
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
E. Haller
中科院分区：
文献类型：
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作者：
H. Bracht;N. Wehmeier;S. Eon;A. Plech;D. Issenmann;J. L. Hansen;A. Larsen;J. Ager;E. Haller
我们报告了同位素调制硅的热导率测量结果，该硅由高度富集的硅 28 和硅 29 的交替层组成。通过时间分辨X射线散射测量同位素调制硅与天然硅相比热导率降低。将实验结果与相应热扩散方程的数值解进行比较，发现同位素结构的导热系数比天然硅低三倍。我们的结果表明，同位素调制结构可以有效降低硅的热导率。这为优化热电应用的硅提供了一种有前景的方法。
We report measurements of the thermal conductivity of isotopically modulated silicon that consists of alternating layers of highly enriched silicon-28 and silicon-29. A reduced thermal conductivity of the isotopically modulated silicon compared to natural silicon was measured by means of time-resolved x-ray scattering. Comparison of the experimental results to numerical solutions of the corresponding heat diffusion equations reveals a factor of three lower thermal conductivity of the isotope structure compared to natural Si. Our results demonstrate that the thermal conductivity of silicon can be effectively reduced with isotopically modulated structures. This offers a promising approach to optimize silicon for thermoelectric applications.