Nano-SiC region formation in (100) Si-on-insulator substrate: Optimization of hot-C+-ion implantation process to improve photoluminescence intensity
Nano-SiC region formation in (100) Si-on-insulator substrate: Optimization of hot-C+-ion implantation process to improve photoluminescence intensity
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DOI：
10.7567/jjap.57.04fb03
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发表时间：
2018-03
影响因子：
1.5
通讯作者：
T. Mizuno;Y. Omata;R. Kanazawa;Y. Iguchi;S. Nakada;T. Aoki;T. Sasaki
中科院分区：
文献类型：
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作者：
T. Mizuno;Y. Omata;R. Kanazawa;Y. Iguchi;S. Nakada;T. Aoki;T. Sasaki
为了提高Si基光子器件的光致发光（PL）强度，我们在不同的热C+离子注入温度和C+离子注入剂量下，对（100）Si衬底中形成纳米SiC（碳化硅）区的热C+离子注入工艺进行了实验研究。我们通过在约700 °C的温度和约4 × 1016 cm−2的C+离子剂量下进行热C+离子注入，成功地优化了工艺，以实现从表面氧化物/Si界面附近约1.5 nm厚的C原子偏析层发射的高强度PL。此外，原子探针断层扫描表明，注入的C原子簇在Si层和氧化物/Si界面附近，因此，C含量局部冷凝，甚至在C原子偏析层，这导致SiC的形成。校正球差透射电子显微镜也表明，4 H-SiC和3C-SiC纳米区域附近的表面氧化物/Si和掩埋氧化物/Si界面部分生长到氧化物层中，所观察到的PL光子主要从表面SiC纳米区域发射。
We experimentally studied the optimization of the hot-C+-ion implantation process for forming nano-SiC (silicon carbide) regions in a (100) Si-on-insulator substrate at various hot-C+-ion implantation temperatures and C+ ion doses to improve photoluminescence (PL) intensity for future Si-based photonic devices. We successfully optimized the process by hot-C+-ion implantation at a temperature of about 700 °C and a C+ ion dose of approximately 4 × 1016 cm−2 to realize a high intensity of PL emitted from an approximately 1.5-nm-thick C atom segregation layer near the surface-oxide/Si interface. Moreover, atom probe tomography showed that implanted C atoms cluster in the Si layer and near the oxide/Si interface; thus, the C content locally condenses even in the C atom segregation layer, which leads to SiC formation. Corrector-spherical aberration transmission electron microscopy also showed that both 4H-SiC and 3C-SiC nanoareas near both the surface-oxide/Si and buried-oxide/Si interfaces partially grow into the oxide layer, and the observed PL photons are mainly emitted from the surface SiC nano areas.