Generation of femtosecond electromagnetic pulses from semiconductor surfaces
Generation of femtosecond electromagnetic pulses from semiconductor surfaces
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DOI：
10.1063/1.102601
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发表时间：
1990-03
期刊：
影响因子：
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通讯作者：
Xiang Zhang;B. Hu;J. Darrow;D. Auston
中科院分区：
文献类型：
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作者：
Xiang Zhang;B. Hu;J. Darrow;D. Auston
我们已经从各种半导体中产生了电磁波。当裸半导体晶片被飞秒光脉冲照射时，电磁波从表面辐射出来，并在内外方向形成共线衍射限制的电磁束。辐射场的幅度和相位取决于载流子迁移率、半导体表面静态内场的强度和极性。
We have generated electromagnetic beams from a variety of semiconductors. When a bare semiconductor wafer was illuminated by femtosecond optical pulses, electromagnetic waves radiate from the surface and form collinear diffraction‐limited electromagnetic beams in the inward and outward directions. The amplitude and phase of the radiated field depend on carrier mobility, the strength and polarity of the static internal field at the semiconductor surface.