Spin Readout of a CMOS Quantum Dot by Gate Reflectometry and Spin-Dependent Tunneling
Spin Readout of a CMOS Quantum Dot by Gate Reflectometry and Spin-Dependent Tunneling
复制标题
DOI：
10.1103/prxquantum.2.010353
复制
发表时间：
2021-03-31
期刊：
影响因子：
9.7
通讯作者：
Morton, John J. L.
中科院分区：
文献类型：
--
作者：
Ciriano-Tejel, Virginia N.;Fogarty, Michael A.;Morton, John J. L.
硅自旋量子比特是实现大规模量子处理器的有希望的候选者，受益于磁安静的宿主材料和利用成熟的硅器件制造行业的前景。我们报告的测量电子自旋在一个单独占据的栅极定义的量子点，在300毫米的晶圆规模使用CMOS兼容的工艺制造。对于读出，我们采用自旋相关的隧道结合一个低足迹的单引线量子点电荷传感器，使用射频栅反射测量。我们证明了使用这种技术在两个设备中的自旋读出，获得谷分裂在0.5-0.7 meV的范围内使用激发态光谱，并测量在1 T的最大电子自旋弛豫时间（T-1）为9 +/- 3 s。这些长寿命表明，这里采用的硅纳米线几何形状和制造工艺显示了量子位器件的巨大潜力，而这里展示的自旋读出方法非常适合各种可扩展的架构。
Silicon spin qubits are promising candidates for realizing large-scale quantum processors, benefitting from a magnetically quiet host material and the prospects of leveraging the mature silicon device fabrication industry. We report the measurement of an electron spin in a singly occupied gate-defined quantum dot, fabricated using CMOS-compatible processes at the 300-mm wafer scale. For readout, we employ spin-dependent tunneling combined with a low-footprint single-lead quantum-dot charge sensor, measured using rf gate reflectometry. We demonstrate spin readout in two devices using this technique, obtaining valley splittings in the range 0.5-0.7 meV using excited-state spectroscopy, and measure a maximum electron-spin relaxation time (T-1) of 9 +/- 3 s at 1 T. These long lifetimes indicate the silicon-nanowire geometry and fabrication processes employed here show a great deal of promise for qubit devices, while the spin-readout method demonstrated here is well suited to a variety of scalable architectures.