Effects of V-Doping on Mixed Conduction Properties of Bismuth Titanate Single Crystals
Effects of V-Doping on Mixed Conduction Properties of Bismuth Titanate Single Crystals
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DOI：
10.1143/jjap.42.6222
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发表时间：
2003-09
影响因子：
1.5
通讯作者：
Masatake Takahashi;Y. Noguchi;M. Miyayama
中科院分区：
文献类型：
--
作者：
Masatake Takahashi;Y. Noguchi;M. Miyayama
采用复阻抗法研究了钛酸铋（BiT）和掺钒钛酸铋（V-BiT）单晶的高温导电行为。氧分压的电导率的依赖性表明，BiT和V-BiT显示氧化物离子和p型混合导电性能。在BiT和V-BiT中，离子电导率沿a（B）轴沿着大于空穴电导率，而空穴电导率沿c轴沿着远大于离子电导率。钒掺杂大大降低了沿着a（B）轴的离子和空穴电导率。相反，V-BiT沿着c轴的离子和空穴电导率几乎与BiT相同。结果表明，铋和氧空位优先存在于BiT中的赝钙钛矿块体中，钒取代有效地降低了赝钙钛矿块体中氧空位和空穴的浓度。
Electrical conduction behaviors of bismuth titanate (BiT) and vanadium-doped bismuth titanate (V-BiT) single crystals were investigated by the complex impedance method at high temperatures. Oxygen partial pressure dependence of the electrical conductivity revealed that both BiT and V-BiT showed oxide ionic and p-type mixed conduction properties. In both BiT and V-BiT, ionic conductivity was larger than hole conductivity along the a(b)-axis, while hole conductivity was much larger than ionic conductivity along the c-axis. Vanadium doping largely decreased the ionic and hole conductivities along the a(b)-axis. In contrast, the ionic and hole conductivities of V-BiT along the c-axis were almost the same as those of BiT. It was suggested that bismuth and oxygen vacancies preferentially exist in the pseudo-perovskite blocks in BiT, and vanadium substitution effectively decreases the concentration of oxygen vacancies and holes in the pseudo-perovskite blocks.